Download Analog Organic Electronics: Building Blocks for Organic by Hagen Marien PDF

By Hagen Marien

This ebook offers perception into natural electronics know-how and in analog circuit innovations that may be used to extend the functionality of either analog and electronic natural circuits. It explores the area of natural electronics expertise for analog circuit purposes, particularly clever sensor structures. It specializes in all of the construction blocks within the information course of an natural sensor process among the sensor and the electronic processing block. Sensors, amplifiers, analog-to-digital converters and DC-DC converters are mentioned intimately. insurance contains circuit recommendations, circuit implementation, layout judgements and dimension result of the construction blocks described.

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The list of parameters that influence the transistor behavior is endless. A profound examination of the effect of all those parameters is beyond the scope of this work. It is, however, very interesting and important to have a look at the influence of all these production parameters together on the behavioral transistor parameters. The current of a transistor biased in the saturation regime is written in Eq. 4). In this formula four parameters are 42 2 Organic Thin-Film Transistor Technology present which are directly determined by the production process.

A bias stress measurement has been performed to estimate the consequences in the applied organic electronics technology. , with normal exposure to O2 , H2 O, light ,and temperature fluctuations. The measurement results are presented in Fig. 22. A clear shift of the transistor curve is visible that corresponds with a VT shift of 5 V. A degradation of the mobility is not present. This can be due to the short stress time in the experiment. The presented measurement has only been performed on a single transistor and the statistical value of the numerical result is therefore low.

Therefore, an overlap of several micrometers is employed which ensures the transistor performance. However, through this safety margin in terms of overlap a lot of overlap capacitance is created between the gate and the drain and between the gate and the source in the transistor architecture. As can be seen in Fig. 2 there is a 100 % overlap between the source and the gate contacts, as well as between the drain and the gate contact which slows down the 26 2 Organic Thin-Film Transistor Technology Insulator Gate Substrate Substrate Step 4 Pentacene Precursor Step 1 Source Step 3 Gate Substrate Drain Insulator Gate Substrate Step 5 Pentacene Step 2 Source Insulator Gate Substrate Drain Insulator Gate Substrate Fig.

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