Download Arbitrary Modeling of TSVs for 3D Integrated Circuits by Khaled Salah, Yehea Ismail, Visit Amazon's Alaa El-Rouby PDF

By Khaled Salah, Yehea Ismail, Visit Amazon's Alaa El-Rouby Page, search results, Learn about Author Central, Alaa El-Rouby,

This booklet provides a wide-band and expertise self sustaining, SPICE-compatible RLC version for through-silicon vias (TSVs) in 3D built-in circuits. This version money owed for numerous results, together with pores and skin impact, depletion capacitance and within reach touch results. Readers will make the most of in-depth assurance of ideas and expertise equivalent to 3D integration, Macro modeling, dimensional research and compact modeling, in addition to closed shape equations for the via silicon through parasitics. ideas lined are tested by utilizing TSVs in functions similar to a spiral inductor and inductive-based conversation procedure and bandpass filtering.

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Pathak, Y. Joon Lee, T. K. Lim, Through silicon via management during 3D physical design: when to add and how many? in IEEE International Conference on Computer-Aided Design (ICCAD), 2010 41. W. Hung, G. Link, Y. Xie, N. J.  98–104 42. J. K.  32–39 43. K. Bernstein, P. Andry, J. Cann, P. Emma, D. Greenberg, W. Haensch, M. Ignatowski, S. Koester, J. Magerlein, R. Puri, A. Young, Interconnects in the third dimension: design chal- References 44. 45. 46. 47. 48. 49. 50.  562–567 C. Ferri, S. Reda, I.

Yu, J. Ho, L. C. Chillara, J. P. E. J. D. Franzon, Through silicon via technology: the ultimate market for 3D interconnect, Tech Search International, Jan 2008 Chapter 3 TSV Modeling and Analysis A robust wideband lumped element model for an arbitrary arrangement of multi through silicon vias (TSVs) is introduced. The introduced model takes into account the skin effects, the nonlinear TSV capacitance, coupling parasitics, adjacent body contact effects, as well as the parasitic elements due to the finite substrate ­resistivity.

Study the TSV impact on circuit performance. 52 3 TSV Modeling and Analysis TSV Structure Physics and circuit theory basics Quasi Static Simulator Full Wave Simulator TSV Equivalent Model (Wide-Band) (MOS Effect) yes No Error < 5% Use quasi-static Use Full wave TSV Extracted Equivalent Model (Frequency Dependent) Optimization (Dimensional Analysis) TSV SPICE Compatible Model Fig. 2 Modeling Methodology 53 Electromagnetic Analysis Analytical Techniques Numerical Techniques Empirical Techniques EM Simulation- based Equation-based Measurement-based Differential Equations Simulator Integral Equations Simulator Time Domain Frequency Domain PEEC MoM BEM Time Domain Frequency Domain FDTD FEM Fig.

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